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Kansas State University

Research Foundation
Kansas State University
2005 Research Park Circle
Suite 105
Manhattan, KS 66502-5020
Tel: 785-532-5720
Fax: 785-532-3920
tech.transfer@k-state.edu

Method and Apparatus for Use of III-Nitride Wide Bandgap Semiconductors in Optical Communications

Reference Number: 02-31

Inventors: Hongzing Jiang, Jingyu Lin and Rongqing Hui

Description:

There is a need for advancements in semicondutor technology. Current semiconductors have very low efficiencies and are unable to handle high power and high temperatures. Research at Kansas State University has resulted in the development of III-Nitride wide bandgap semiconductor materials for optical communication, LED, and lighting application. The use of III-Nitride materials will expand operations into the short wavelength regions of the visible spectrum (Green, Blue, Violet) and beyond into the UV range.

Applications
  • High density optical recording
  • Wireless mobile devices
  • Brighter cell phone backlighting
  • Backlighting larger LCD screens
  • Information storage
  • Energy
  • Environment
  • Nanotechnology
  • Camera flash
Advantages
  • Utilizes short wavelengths
  • Handles high-power
  • Handles high temperatures
  • These allow for enhanced communications and enhanced data storage capabilities

Patent Status

  • Parent Application 10/783,972 filed on February 20, 2004

Kansas State University Research Foundation seeks to have discussions with companies that are interested in licensing and/or research collaborations.

Interested parties should contact:

National Institute for Strategic Technology Acquisition and Commercialization (NISTAC)
2005 Research Park Circle Manhattan, KS 66502
Tel: 785-532-3900 Fax: 785-532-3909
E-Mail: nistac@ksu.edu