Strategic Technologies
Cutting Tools
To view the entire patent, please click the patent number for the U.S. Patent Office site. For information on licensing a technology please contact the NISTAC representative listed below.
U.S. Patents:
Method of producing CVD diamond coated scribing wheels
Patent # 5,855,974 containing 15 claims, issued 01/05/1999. A method for providing a diamond film on a scribing wheel, which is useful for scribing glassy materials in order to increase its wear resistance. The method comprises sequential steps, which include pre-treating the surface of the scribing wheel and thereafter depositing the diamond film on the pretreated scribing wheel by a chemical vapor deposition process.
Patent # 5,518,780 containing 8 claims, issued 05/21/1996. This invention is directed to a process for providing a hard, transparent, hydrophobic film of hydrogenated boron nitride on a substrate and the film so made. The process comprises depositing the film condensation from a flux of ions generated from gaseous precursors comprising borazine, the kinetic energy of the ions being between 50 and 300 electron volts per ion. Preferably the process is plasma-enhanced chemical vapor deposition carried out in a radio frequency plasma system.
Patent # 5,425,965 containing 13 claims, issued 06/20/1996. This invention is directed to a method for enhancing the diamond nucleation on a substrate prior to providing a diamond film thereon. More particularly, it is directed to a method which involved ultrasonic treatment of the substrate surface with a fluid consisting essentially of unsaturated oxygen-free hydrocarbons and diamond grit.
Metal-nitrides prepared by photolytic/pyrolytic decomposition of metal-amides
Patent # 5,417,823 containing 8 claims, issued 05/23/1995. This invention is directed to a method for preparing materials comprising metal nitrides by the photolytic/pyrolytic decomposition of metal amides. The metal amides may be zirconium and/or niobium amides, which may additionally contain titanium amides.
Patent # 5,406,906 containing 10 claims, issued 04/18/1995. A crystalline silicon carbide film is grown on a heated crystalline silicon substrate by laser ablation of a pure carbon target. For substrate temperatures during deposition above 1000° C. and single crystal silicon substrates the resulting SiC film is expitaxially oriented with respect to the substrate. Films of stoichiometric SiC are grown up to thicknesses of about 4000.ANG.. These films grow on top of the silicon substrate and whereas the source of carbon for the film is from the ablation plume of the carbon target the source of the silicon is from the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 µm with part of the silicon being supplied by the ablation plume of the silicon target.
Patent # 5,403,563 containing 11 claims, issued 04/04/1995. Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.
Patent # 5,350,719 containing 14 claims, issued 09/27/1994. A titanium tetrahalide is reacted with a disilazane to prepare a titanium containing organometallic precursor, which is thereafter mixed with a refractory material powder and pyrolyzed to form a titanium nitride-containing refractory material composite containing crystalline titanium nitride.
Patent # 5,240,736 containing 21 claims, issued 08/31/1993. Provided is a method and apparatus for in-situ measuring filament temperature and the thickness of a film deposited on a substrate disposed within a hot-filament chemical vapor deposition reactor. In accordance with the invention, white light which is emitted directly from the filament and that reflects from the top and bottom surfaces of a deposited film are collected and converted to monochromatic light through the use of simple narrow-banned interference filters operative over specific, yet different, optical banned widths. This information is thereafter used to mathematically calculate the filament temperature, film thickness and growth rate of the deposited film.
Patent # 5,183,529 containing 11 claims, issued 02/02/1993. Method of fabricating free-standing diamond films by depositing and adhering polycrystalline diamond by hot filament chemical vapor deposition (1-100 Torr, filament temperature equal to or greater than 1900° C., substrate temperature of 650°-950° C.) onto a substrate meltable at a temperature slightly in excess of the deposition temperature; and (b) prior to cooling said polycrystalline diamond particles, increasing (50°-300° C.) the substrate temperature to melt at least a portion thereof while permitting such melt to emigrate from the diamond films.
Patent # 5,174,691 containing 6 claims, issued 12/29/1992. A drill construction to overcome the problem of high speed (>5000 rpm), high feed rate (>200 inches/minute) chip removal in deep hole drilling of nonferrous workpieces, comprising: (a) a shank for receiving rotary power, (b) an elongate bit extending from such shank coaxially aligned therewith and having a continuous single spiral land occupying one quadrant or less of said bit cross-section with a single spiral flute surrounding said land; (c) a cutting end portion extending integrally from said bit, said end portion having a conically-shaped end surface interrupted by diametrically opposed flutes, one of said flutes being a continuation of the bit flute thereby to define cutting edges, said edges further being defined by arcuate indentations resulting in a plurality of cusps to assist in breaking chips as they are formed; and (d) channels for conducting high pressure (>800 psi) fluid for cooling the bit, end portion, and chips during drilling and for hydrodynamically forcing the broken chips along said flutes, said high pressure fluid means extending centrally axially through said shank and end portion, terminating in exit openings in said end surface.
Patent # 5,171,557 containing 29 claims, issued 12/15/1992. Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate, which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.
Patent # 5,065,647 containing 7 claims, issued 11/19/1991. Method of making and tool bit construction; the bit has a diametrical blade implant of a two-phase material: a main phase of cemented carbine with diffusion bonded cubic boron nitride insert phases placed at high stress corners of such blade, limited strictly to the radial cutting zone of the bit without penetrating the centering zone.
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