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Method and Apparatus for Use of III-Nitride Wide Bandgap Semiconductors in Optical Communications

Reference Number: 02-31

Inventors: Hongxing Jiang, Jingyu Lin and Rongqing Hui


There is a need for advancements in semiconductor technology. Current semiconductors have very low efficiencies and are unable to handle high power and high temperatures. Research at Kansas State University has resulted in the development of III-Nitride wide bandgap semiconductor materials for optical communication, LED, and lighting application. The use of III-Nitride materials will expand operations into the short wavelength regions of the visible spectrum (Green, Blue, Violet) and beyond into the UV range.

  • High density optical recording
  • Wireless mobile devices
  • Brighter cell phone backlighting
  • Backlighting larger LCD screens
  • Information storage
  • Energy
  • Environment
  • Nanotechnology
  • Camera flash
  • Utilizes short wavelengths
  • Handles high-power
  • Handles high temperatures
  • These allow for enhanced communications and enhanced data storage capabilities
Patent Status
  • U.S. patent #7,345,812 issued on March 18, 2008.

Kansas State University Research Foundation seeks to have discussions with companies that are interested in licensing and/or research collaborations.

Interested parties should contact:

Kansas State University Institute for Commercialization (KSU-IC)
2005 Research Park Circle Manhattan, KS 66502
Tel: 785-532-3900 Fax: 785-532-3909
E-Mail: ic@k-state.edu