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Institute for Commercialization

Preparation of crystallographically aligned films of silicon carbide by laser deposition of carbon onto

Reference Number: N 03-03

Inventors: Rimai, Lajos; Ager, Richard M.; Weber, Willes H.

Owner: NISTAC

USPTO Link:5406906

Invention Summary

A crystalline silicon carbide film is grown on a heated crystalline silicon substrate by laser ablation of a pure carbon target. For substrate temperatures during deposition above 1000° C. and single crystal silicon substrates the resulting SiC film is expitaxially oriented with respect to the substrate. Films of stoichiometric SiC are grown up to thicknesses of about 4000.ANG.. These films grow on top of the silicon substrate and whereas the source of carbon for the film is from the ablation plume of the carbon target the source of the silicon is from the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 µm with part of the silicon being supplied by the ablation plume of the silicon target.